Chaussende, D.: search on Z-Library

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1

Written at Imperial Command: Panegyric Poetry in Early Medieval China

Chaussende, Damien

Journal:

Year:

2010

Language:

french

File:

PDF, 960 KB

french, 2010

2

On Ethics and History: Essays and Letters of Zhang Xuecheng

Chaussende, Damien

Journal:

Year:

2011

Language:

french

File:

PDF, 675 KB

french, 2011

3

The Oxford History of Historical Writing, Volume 1: Beginnings to AD 600

Chaussende, Damien

Journal:

Year:

2011

Language:

french

File:

PDF, 776 KB

french, 2011

4

Single Crystals of Electronic Materials || Silicon carbide

Chaussende, Didier

Year:

2019

Language:

english

File:

PDF, 3.13 MB

english, 2019

5

Robert Bonnaud. Victoires sur le temps. Essais comparatistes : Polybe le Grec et Sima Qian le Chinois. Paris, La Ligne d'ombre, 2007, 127 p.

Chaussende, Damien

Journal:

Annales Histoire Sciences Sociales

Year:

2009

Language:

french

File:

PDF, 66 KB

french, 2009

6

Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide

Tsavdaris, Nikolaos, Ariyawong, Kanaparin, Dedulle, Jean-Marc, Sarigiannidou, Eirini, Chaussende, Didier

Journal:

Crystal Growth & Design

Year:

2015

Language:

english

File:

PDF, 9.67 MB

english, 2015

7

Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

Maya Marinova, Georgios Zoulis, Teddy Robert, Frederic Mercier, Alkioni Mantzari, Irina Galben, Olivier Kim-Hak, Jean Lorenzzi, Sandrine Juillaguet, Didier Chaussende, Gabriel Ferro, Jean Camassel, Ef

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 389 KB

english, 2009

8

Control of the Supersaturation in the CF−PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications

Chaussende, Didier, Ucar, Magali, Auvray, Laurent, Baillet, Francis, Pons, Michel, Madar, Roland

Journal:

Crystal Growth & Design

Year:

2005

Language:

english

File:

PDF, 500 KB

english, 2005

9

Historical Dictionary of Medieval China

Chaussende, Damien

Journal:

Year:

2009

Language:

french

File:

PDF, 630 KB

french, 2009

10

Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach

Ariyawong, Kanaparin, Dedulle, Jean Marc, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 367 KB

english, 2014

11

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

Pons, Michel, Nishizawa, Shin-Ichi, Wellmann, Peter, Blanquet, Elisabeth, Chaussende, Didier, Dedulle, Jean Marc

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

12

Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates

Olivier Kim-Hak, Gabriel Ferro, Jean Lorenzzi, Davy Carole, Jacques Dazord, Patrick Chaudouët, Didier Chaussende, Philippe Miele

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.72 MB

english, 2010

13

Thermochemistry of silicon carbide growth by chemical transport reactions

D. Chaussende, G. Ferro, Y. Monteil, C. Brylinski, J. Bouix

Journal:

Journal of Materials Science

Year:

2001

Language:

english

File:

PDF, 137 KB

english, 2001

14

Vapour–liquid–solid mechanism for the growth of SiC homoepitaxial layers by VPE

D. Chaussende, G. Ferro, Y. Monteil

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 370 KB

english, 2002

15

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach

Ariyawong, Kanaparin, Chatillon, Christian, Blanquet, Elisabeth, Dedulle, Jean Marc, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 812 KB

english, 2015

16

High temperature solution growth and characterization of Cr2AlC single crystals

Ouisse, T., Sarigiannidou, E., Chaix-Pluchery, O., Roussel, H., Doisneau, B., Chaussende, D.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.00 MB

english, 2013

17

SiC Homoepitaxial Growth at Low Temperature by Vapor−Liquid−Solid Mechanism in Al−Si Melt

Jacquier, Christophe, Ferro, Gabriel, Cauwet, François, Chaussende, D., Monteil, Yves

Journal:

Crystal Growth & Design

Year:

2003

Language:

english

File:

PDF, 47 KB

english, 2003

18

Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT

Ariyawong, Kanaparin, Blanquet, Elisabeth, Dedulle, Jean Marc, Ouisse, Thierry, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 1.59 MB

english, 2014

19

Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals

Seiss, M., Ouisse, T., Chaussende, D.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

20

High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

Boutarek, N., Chaussende, Didier, Madar, Roland

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 874 KB

english, 2007

21

Historical Dictionary of Medieval China. Historical Dictionaries of Ancient Civilizations and Historical Eras, No. 19by Victor Cunrui Xiong

Damien Chaussende

Journal:

Year:

2009

File:

PDF, 248 KB

2009

22

Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent

Lefebure, Julien, Dedulle, Jean-Marc, Ouisse, Thierry, Chaussende, Didier

Journal:

Crystal Growth & Design

Year:

2012

Language:

english

File:

PDF, 3.71 MB

english, 2012

23

High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces

Latu-Romain, Laurence, Chaussende, Didier, Pons, Michel

Journal:

Crystal Growth & Design

Year:

2006

Language:

english

File:

PDF, 852 KB

english, 2006

24

Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals

Chaussende, Didier, Jacquier, Christophe, Ferro, Gabriel, Viala, Jean Claude, Cauwet, François, Monteil, Yves

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 371 KB

2001

25

Growth of AlN and AlN-SiC Solid Solution by Sublimation Method

Anikin, Mikhail, Chaussende, Didier, Pernot, Etienne, Chaix-Pluchery, O., Roussel, H., Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 538 KB

english, 2006

26

Critical assessment and thermodynamic modeling of the Al–C system

Deffrennes, G., Gardiola, B., Allam, M., Chaussende, D., Pisch, A., Andrieux, J., Schmid-Fetzer, R., Dezellus, O.

Journal:

Year:

2019

Language:

english

File:

PDF, 1.72 MB

english, 2019

27

Top Seeded Solution Growth of 3C-SiC Single Crystals

Mercier, Frederic, Chaussende, Didier, Dedulle, Jean Marc, Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 953 KB

english, 2009

28

Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Lefebure, Julien, Dedulle, Jean Marc, Ouisse, Thierry, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 433 KB

english, 2012

29

Prospects for 3C-SiC bulk crystal growth

D. Chaussende, F. Mercier, A. Boulle, F. Conchon, M. Soueidan, G. Ferro, A. Mantzari, A. Andreadou, E.K. Polychroniadis, C. Balloud, S. Juillaguet, J. Camassel, M. Pons

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 888 KB

english, 2008

30

Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth

Frédéric Mercier, Jean-Marc Dedulle, Didier Chaussende, Michel Pons

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 575 KB

english, 2010

31

A comprehensive study of SiC growth processes in a VPE reactor

Thierry Chassagne, Gabriel Ferro, Didier Chaussende, François Cauwet, Yves Monteil, Jean Bouix

Journal:

Thin Solid Films

Year:

2002

Language:

english

File:

PDF, 1.28 MB

english, 2002

32

Gas Fed Top-Seeded Solution Growth of Silicon Carbide

Chaussende, Didier, Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 903 KB

english, 2006

33

A first step toward bridging silicon carbide crystal properties and physical-chemistry of crystal growth

Ariyawong, Kanaparin, Chatillon, Christian, Blanquet, Elisabeth, Dedulle, Jean-Marc, Chaussende, Didier

Journal:

Year:

2016

Language:

english

File:

PDF, 705 KB

english, 2016

34

Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al

Ferro, Gabriel, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 411 KB

2020

35

UNDERSTANDING Al incorporation into 4H-SiC during epitaxy

Ferro, Gabriel, Chaussende, Didier, Tsavdaris, Nikolaos

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 762 KB

english, 2018

36

3Câ, 4Hâ, and 6HâSiC crystal habitus and interfacial behaviours in high temperature Si-based solvents

Narumi, Taka, Chaussende, Didier, Yoshikawa, Takashi

Journal:

Year:

2020

File:

PDF, 1.65 MB

2020

37

In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging

Chaussende, Didier, Wellmann, Peter J., Ucar, M., Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 451 KB

english, 2006

38

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

Tsavdaris, Nikolaos, Kwasnicki, Pawel, Ariyawong, Kanaparin, Valle, Nathalie, Peyre, Herve, Sarigiannidou, Eirini, Juillaguet, Sandrine, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 547 KB

english, 2015

39

Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC

Chaussende, Didier, Parent-Bert, Lucile, Shin, Yun Ji, Ouisse, Thierry, Yoshikawa, Takeshi

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 2.68 MB

english, 2016

40

Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide

Seiss, Martin, Ouisse, Thierry, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

41

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma

Choi, Ji Hoon, Latu-Romain, Laurence, Dhalluin, Florian, Chevolleau, Thierry, Salem, Bassem, Baron, Thierry, Chaussende, Didier, Bano, Edwige

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 455 KB

english, 2012

42

Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents

Shin, Yun Ji, Ariyawong, Kanaparin, Doisneau, Beatrice, Dedulle, Jean Marc, Brosselard, Pierre, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 4.89 MB

english, 2016

43

Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?

Mercier, Frederic, Kim-Hak, Olivier, Lorenzzi, Jean, Dedulle, Jean Marc, Ferro, Gabriel, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 678 KB

english, 2010

44

Characterization of Bulk 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

Latu-Romain, Laurence, Chaussende, Didier, Balloud, Carole, Juillaguet, Sandrine, Rapenne, L., Pernot, Etienne, Camassel, Jean, Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 1.15 MB

english, 2006

45

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

Sun, Guoli L., Galben-Sandulache, Irina G., Ouisse, Thierry, Dedulle, Jean Marc, Pons, Michel, Madar, Roland, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 5.19 MB

english, 2010

46

Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique

Galben-Sandulache, Irina G., Sun, Guoli L., Dedulle, Jean Marc, Ouisse, Thierry, Madar, Roland, Pons, Michel, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 959 KB

english, 2010

47

Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering

A. Boulle, D. Chaussende, F. Conchon, G. Ferro, O. Masson

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 595 KB

english, 2008

48

Biomechanical characteristics of unconditioned and conditioned latissimus dorsi muscles used for cardiocirculatory assistance

M.A Radermecker, F Chaussend, C Struble, P.A Grandjean, J Fourny, B Focant, P Gerard, D Serteyn, R Limet

Journal:

Cardiovascular Surgery

Year:

1997

Language:

english

File:

PDF, 615 KB

english, 1997

49

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Study of the Stability of 3C-SiC Single Crystals Using High-Resolution Diffuse X-Ray Scattering

Dompoint, D., Boulle, A., Galben-Sandulache, I. G., Chaussende, D., Ferro, Gabriel, Siffert, Paul

Year:

2010

Language:

english

File:

PDF, 940 KB

english, 2010

50

Wettability Study of SiC in Correlation with XPS Analysis

Stambouli, V., Chaussende, Didier, Anikin, Mikhail, Berthomé, G., Thoreau, V., Joud, J.C.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 202 KB

english, 2004

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